Technical parameters/drain source resistance: 0.018 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 312.5 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | TO-3 |
200V N沟道MOSFET 200V N-Channel MOSFET
|
||
IRFS4321PBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRFS4321PBF 晶体管, MOSFET, N沟道, 83 A, 150 V, 0.012 ohm, 10 V, 5 V
|
||
SUM23N15-73-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
SUM23N15-73-E3 N-channel MOSFET Transistor, 23A, 150V, 3Pin TO-263
|
||
SUM23N15-73-E3
|
Vishay Intertechnology | 类似代替 | TO-263-3 |
SUM23N15-73-E3 N-channel MOSFET Transistor, 23A, 150V, 3Pin TO-263
|
||
SUM85N15-19-E3
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET N-CH 150V 85A D2PAK
|
||
SUM85N15-19-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 150V 85A D2PAK
|
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