Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.015 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 375 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 85.0 A
Technical parameters/operating temperature (Max): 175 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM23N15-73-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
SUM23N15-73-E3 N-channel MOSFET Transistor, 23A, 150V, 3Pin TO-263
|
||
SUM23N15-73-E3
|
Vishay Intertechnology | 功能相似 | TO-263-3 |
SUM23N15-73-E3 N-channel MOSFET Transistor, 23A, 150V, 3Pin TO-263
|
||
SUM75N15-18P-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 150V 75A 3Pin(2+Tab) TO-263
|
||
SUM75N15-18P-E3
|
Vishay Semiconductor | 功能相似 | TO-263 |
Trans MOSFET N-CH 150V 75A 3Pin(2+Tab) TO-263
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review