Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 21.3A |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RSD200N10TL
|
ROHM Semiconductor | 功能相似 | TO-252-3 |
CPT N-CH 100V 20A
|
||
SPP21N10
|
Infineon | 功能相似 | TO-220-3 |
SIPMOS功率三极管 SIPMOS Power-Transistor
|
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