Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 21.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 90 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 21A
Technical parameters/rise time: 56 ns
Technical parameters/Input capacitance (Ciss): 865pF @25V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 15.65 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3690
|
ON Semiconductor | 功能相似 | TO-252-3 |
100V N沟道PowerTrench MOSFET的 100V N-Channel PowerTrench MOSFET
|
||
RSD200N10TL
|
ROHM Semiconductor | 功能相似 | TO-252-3 |
CPT N-CH 100V 20A
|
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