Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 6.5 ns
Technical parameters/Input capacitance (Ciss): 1514pF @50V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 60000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RSD200N10TL
|
ROHM Semiconductor | 功能相似 | TO-252-3 |
CPT N-CH 100V 20A
|
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