Technical parameters/dissipated power: 3.75W (Ta), 375W (Tc)
Technical parameters/Input capacitance (Ciss): 4750pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM23N15-73-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
SUM23N15-73-E3 N-channel MOSFET Transistor, 23A, 150V, 3Pin TO-263
|
||
SUM23N15-73-E3
|
Vishay Intertechnology | 功能相似 | TO-263-3 |
SUM23N15-73-E3 N-channel MOSFET Transistor, 23A, 150V, 3Pin TO-263
|
||
SUM75N15-18P-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 150V 75A 3Pin(2+Tab) TO-263
|
||
SUM75N15-18P-E3
|
Vishay Semiconductor | 功能相似 | TO-263 |
Trans MOSFET N-CH 150V 75A 3Pin(2+Tab) TO-263
|
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