Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta), 73.5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 3535pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 73.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD36NH02L
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道24V - 0.011ohm - 30A - DPAK封装的STripFET III功率MOSFET N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET
|
||
STD38NH02LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道24V - 0.011ohm - 38A - DPAK / IPAK的STripFET TM III功率MOSFET N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET
|
||
STD44N4LF6
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道40 V , 8.9 MI © , 44采用DPAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET⢠VI DeepGATE⢠Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review