Technical parameters/rated voltage (DC): 24.0 V
Technical parameters/rated current: 38.0 A
Technical parameters/drain source resistance: 15.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 40W (Tc)
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/leakage source breakdown voltage: 24.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 38.0 A
Technical parameters/rise time: 62 ns
Technical parameters/Input capacitance (Ciss): 1070pF @25V(Vds)
Technical parameters/rated power (Max): 40 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD27N3LH5
|
ST Microelectronics | 功能相似 | TO-252-3 |
DPAK N-CH 30V 27A
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||
STD36NH02L
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道24V - 0.011ohm - 30A - DPAK封装的STripFET III功率MOSFET N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET
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STD44N4LF6
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道40 V ， 8.9 MI © ， 44采用DPAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET⢠VI DeepGATE⢠Power MOSFET
|
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