Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 19 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 30 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 27A
Technical parameters/Input capacitance (Ciss): 475pF @25V(Vds)
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD36NH02L
|
ST Microelectronics | 类似代替 | TO-252-3 |
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||
STD38NH02LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道24V - 0.011ohm - 38A - DPAK / IPAK的STripFET TM III功率MOSFET N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET
|
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STD44N4LF6
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道40 V ， 8.9 MI © ， 44采用DPAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET⢠VI DeepGATE⢠Power MOSFET
|
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