Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 14.5 mΩ
Technical parameters/dissipated power: 45 W
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/leakage source breakdown voltage: 24 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 860pF @15V(Vds)
Technical parameters/rated power (Max): 45 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 45W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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N沟道40 V ， 8.9 MI © ， 44采用DPAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET⢠VI DeepGATE⢠Power MOSFET
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