Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0089 Ω
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 1V ~ 2.5V
Technical parameters/input capacitance: 1190 pF
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 1190pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD27N3LH5
|
ST Microelectronics | 功能相似 | TO-252-3 |
DPAK N-CH 30V 27A
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STD36NH02L
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道24V - 0.011ohm - 30A - DPAK封装的STripFET III功率MOSFET N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET
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STD38NH02LT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道24V - 0.011ohm - 38A - DPAK / IPAK的STripFET TM III功率MOSFET N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET
|
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