Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 1.00 A
Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.9 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.00 A
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 206pF @25V(Vds)
Technical parameters/rated power (Max): 2.9 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.9W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.8 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT4N20
|
Fairchild | 功能相似 | SOT-223 |
200V N沟道MOSFET 200V N-Channel MOSFET
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Vishay Semiconductor | 功能相似 |
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IRFL210
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Vishay Siliconix | 功能相似 | TO-261-4 |
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IRFL210
|
IRF | 功能相似 |
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