Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 0.85A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL210
|
VISHAY | 功能相似 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210
|
International Rectifier | 功能相似 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 200V 0.96A SOT223
|
|||
IRFL210
|
Vishay Siliconix | 功能相似 | TO-261-4 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210
|
IRF | 功能相似 |
MOSFET N-CH 200V 0.96A SOT223
|
|||
STN1N20
|
ST Microelectronics | 功能相似 | TO-261-4 |
N - CHANNEL 200V - 1.2欧姆 - 1A - SOT- 223功率MOS晶体管 N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR
|
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