Technical parameters/dissipated power: 2W (Ta), 3.1W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 3.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL210PBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210PBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210PBF
|
Vishay Intertechnology | 完全替代 | TO-261 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TR
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TR
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TR
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 200V 0.96A SOT223
|
|||
IRFL210TRPBF
|
International Rectifier | 类似代替 | SOT-223-3 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL210TRPBF
|
Vishay Semiconductor | 类似代替 | SOT-223 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL210TRPBF
|
VISHAY | 类似代替 | TO-261-4 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL210TRPBF
|
Vishay Intertechnology | 类似代替 | SOT-223-3 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
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