Technical parameters/rated power: | 3.1 W |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 960 mA |
|
Technical parameters/Input capacitance (Ciss): | 140pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 2 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL210PBF
|
VISHAY | 功能相似 | TO-261-4 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210PBF
|
International Rectifier | 功能相似 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210PBF
|
Vishay Intertechnology | 功能相似 | TO-261 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TRPBF
|
International Rectifier | 完全替代 | SOT-223-3 |
功率MOSFET Power MOSFET
|
||
IRFL210TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
功率MOSFET Power MOSFET
|
||
IRFL210TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
功率MOSFET Power MOSFET
|
||
IRFL210TRPBF
|
Vishay Intertechnology | 完全替代 | SOT-223-3 |
功率MOSFET Power MOSFET
|
||
STN4NF20L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN4NF20L 晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V 新
|
||
|
|
Zetex | 功能相似 | 4 |
N沟道 200V 320mA
|
||
ZVNL120GTA
|
Diodes | 功能相似 | TO-261-4 |
N沟道 200V 320mA
|
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