Technical parameters/number of channels: 1
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 1.1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.3 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 1A
Technical parameters/rise time: 2 ns
Technical parameters/Input capacitance (Ciss): 150pF @25V(Vds)
Technical parameters/rated power (Max): 3.3 W
Technical parameters/descent time: 10.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/height: 1.8 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT4N20LTF
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT4N20LTF 晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
|
||
FQT4N20LTF
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT4N20LTF 晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
|
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