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Model FQT4N20LTF

Description ON Semiconductor QFET 系列 Si N沟道 MOSFET FQT4N20LTF, 850 mA, Vds=200 V, 3针+焊片 SOT-223封装

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1.1 Ω
Technical parameters/dissipated power:	2.2 W
Technical parameters/threshold voltage:	2 V
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/rise time:	70 ns
Technical parameters/Input capacitance (Ciss):	310pF @25V(Vds)
Technical parameters/rated power (Max):	2.2 W
Technical parameters/descent time:	40 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.2W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.5 mm
Dimensions/Width:	3.56 mm
Dimensions/Height:	1.6 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Lighting, Industrial, Power Management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	lead-free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRLM210ATF	ON Semiconductor	功能相似	TO-261-4	Trans MOSFET N-CH 200V 0.77A 4Pin(3+Tab) SOT-223 T/R	PDF
IRLM210ATF	Fairchild	功能相似	SOT-223-4	Trans MOSFET N-CH 200V 0.77A 4Pin(3+Tab) SOT-223 T/R	PDF
STN4NF20L	ST Microelectronics	功能相似	TO-261-4	STMICROELECTRONICS STN4NF20L 晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V 新	PDF