Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 770 mA
Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 770 mA
Technical parameters/Input capacitance (Ciss): 240pF @25V(Vds)
Technical parameters/dissipated power (Max): 1.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223-4
External dimensions/packaging: SOT-223-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT4N20LTF
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT4N20LTF 晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
|
||
FQT4N20LTF
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT4N20LTF 晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
|
||
STN4NF20L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN4NF20L 晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V 新
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