Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 960 mA |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2.00 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Leakage source breakdown voltage: | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 960 mA |
|
Technical parameters/rise time: | 17.0 ns |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL210PBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210PBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210PBF
|
Vishay Intertechnology | 完全替代 | TO-261 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TR
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TR
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 200V 0.96A SOT223
|
||
IRFL210TR
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 200V 0.96A SOT223
|
|||
IRFL210TRPBF
|
International Rectifier | 类似代替 | SOT-223-3 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL210TRPBF
|
Vishay Semiconductor | 类似代替 | SOT-223 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL210TRPBF
|
VISHAY | 类似代替 | TO-261-4 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL210TRPBF
|
Vishay Intertechnology | 类似代替 | SOT-223-3 |
Trans MOSFET N-CH 200V 0.96A 4Pin(3+Tab) SOT-223 T/R
|
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