Technical parameters/frequency: 220 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 200 @500mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 250 @1mA, 5V
Technical parameters/rated power (Max): 415 mW
Technical parameters/DC current gain (hFE): 500
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 415 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Signal Processing, Power Management, Motor Drive & Control, Automotive, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX84-B12,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BZX84-B12,215 单管二极管 齐纳, 12 V, 250 mW, TO-236AB, 2 %, 3 引脚, 150 °C
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DSS4160U-7
|
Diodes | 功能相似 | SOT-323 |
DSS4160U 系列 60 V 1 A 低 VCE(SAT) NPN 表面贴装 晶体管 - SOT-323
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PBSS4160U
|
Nexperia | 功能相似 | UMT |
NPN 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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PBSS4160U
|
NXP | 功能相似 | SC-70 |
NPN 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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||
PBSS4160U,115
|
Nexperia | 功能相似 | SOT-323-3 |
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
|
||
PBSS4160U,115
|
NXP | 功能相似 | SOT-323-3 |
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
|
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