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Model PBSS4160U
Description NPN transistor, NXP series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors
Product QR code
Brand: NXP
Packaging SC-70
Delivery time
Packaging method
Standard packaging quantity 1
0.49  yuan 0.49yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6702) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/breakdown voltage (collector emitter):

60 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

100

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

0.415 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SC-70

 

Dimensions/Length:

2.2 mm

 

Dimensions/Width:

1.35 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

SC-70

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS4160U,115 PBSS4160U,115 Nexperia 功能相似 SOT-323-3
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
PDF
PBSS4160U,115 PBSS4160U,115 NXP 功能相似 SOT-323-3
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
PDF

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