Technical parameters/frequency: | 220 MHz |
|
Technical parameters/rated power: | 0.25 W |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 415 mW |
|
Technical parameters/gain bandwidth product: | 220 MHz |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 200 @500mA, 5V |
|
Technical parameters/rated power (Max): | 415 mW |
|
Technical parameters/DC current gain (hFE): | 500 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 415 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-323-3 |
|
Dimensions/Length: | 2.2 mm |
|
Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-323-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, signal processing, automotive, motor drive and control, power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX84-B12,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BZX84-B12,215 单管二极管 齐纳, 12 V, 250 mW, TO-236AB, 2 %, 3 引脚, 150 °C
|
||
DSS4160U-7
|
Diodes | 功能相似 | SOT-323 |
DSS4160U 系列 60 V 1 A 低 VCE(SAT) NPN 表面贴装 晶体管 - SOT-323
|
||
PBSS4160U
|
Nexperia | 功能相似 | UMT |
NPN 晶体管,NXP 一系列 NXP BISS(小信号的重大突破)低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量,采用紧凑的空间节省型封装。 这些晶体管减少损失,可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管,NXP Semiconductors
|
||
PBSS4160U
|
NXP | 功能相似 | SC-70 |
NPN 晶体管,NXP 一系列 NXP BISS(小信号的重大突破)低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量,采用紧凑的空间节省型封装。 这些晶体管减少损失,可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管,NXP Semiconductors
|
||
PBSS4160U,115
|
Nexperia | 功能相似 | SOT-323-3 |
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
|
||
PBSS4160U,115
|
NXP | 功能相似 | SOT-323-3 |
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review