Encapsulation parameters/Encapsulation: | UMT |
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Dimensions/Packaging: | UMT |
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Other/transistor types: | NPN |
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Other/maximum DC collector current: | 1 A |
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Other/Maximum collector emitter voltage: | 60 V |
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Other/Packaging Types: | UMT |
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Other/Installation Types: | Surface mount |
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Other/maximum power dissipation: | 415 mW |
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Other/Minimum DC Current Gain: | 100 |
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Other/transistor configurations: | single |
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Other/Maximum collector base voltage: | 80 V |
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Other/Maximum emitter base voltage: | 5 V |
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Other/maximum operating frequency: | 220 MHz |
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Other/Number of pins: | 3 |
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Other/Number of components per chip: | 1 |
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Other/Maximum Base emitter Saturation Voltage: | 1.1 V |
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Other/Width: | 1.35mm |
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Other/Sizes: | 1 x 2.2 x 1.35mm |
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Other/Minimum Operating Temperature: | -65 °C |
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Other/Maximum collector emitter saturation voltage: | 0.28 V |
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Other/maximum operating temperature: | +150 °C |
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Other/Length: | 2.2mm |
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Other/Height: | 1mm |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4160U,115
|
Nexperia | 功能相似 | SOT-323-3 |
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
|
||
PBSS4160U,115
|
NXP | 功能相似 | SOT-323-3 |
Nexperia PBSS4160U,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:100, 220 MHz, 3引脚 UMT封装
|
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