Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 2000 @500mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.57 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP51,115
|
NXP | 功能相似 | TO-261-4 |
复合晶体管，Nexperia ### 双极晶体管，Nexperia
|
||
BSP51,115
|
Nexperia | 功能相似 | TO-261-4 |
复合晶体管，Nexperia ### 双极晶体管，Nexperia
|
||
BSP52T1G
|
ON Semiconductor | 完全替代 | TO-261-4 |
ON SEMICONDUCTOR BSP52T1G 单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
|
||
BSP52T3G
|
ON Semiconductor | 完全替代 | TO-261-4 |
ON SEMICONDUCTOR BSP52T3G 达林顿晶体管, NPN, 80V, SOT-223
|
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