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Model BSP52T1G
Description ON SEMICONDUCTOR BSP52T1G 单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
Product QR code
Brand: ON Semiconductor
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.75  yuan 0.75yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6483) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

80.0 V

 

Technical parameters/rated current:

1.00 A

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/output voltage:

80 V

 

Technical parameters/output current:

1 A

 

Technical parameters/number of circuits:

4

 

Technical parameters/number of pins:

4

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

800 mW

 

Technical parameters/breakdown voltage (collector emitter):

80 V

 

Technical parameters/thermal resistance:

156℃/W (RθJA)

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

2000 @500mA, 10V

 

Technical parameters/rated power (Max):

800 mW

 

Technical parameters/DC current gain (hFE):

1000

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1250 mW

 

Technical parameters/input voltage:

5 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

3.5 mm

 

Dimensions/Height:

1.57 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Oth

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Model Brand Similarity Encapsulation Introduction Data manual
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