Technical parameters/rated voltage (DC): | 80.0 V |
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Technical parameters/rated current: | 1.00 A |
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Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/output voltage: | 80 V |
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Technical parameters/output current: | 1 A |
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Technical parameters/number of pins: | 4 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 800 mW |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/thermal resistance: | 156℃/W (RθJA) |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 2000 @500mA, 10V |
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Technical parameters/rated power (Max): | 800 mW |
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Technical parameters/DC current gain (hFE): | 2000 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 125 W |
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Technical parameters/input voltage: | 5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP52T1
|
ON Semiconductor | 完全替代 | TO-261-4 |
中功率NPN硅达林顿晶体管表面贴装 MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
|
||
BSP52T1G
|
ON Semiconductor | 完全替代 | TO-261-4 |
ON SEMICONDUCTOR BSP52T1G 单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
|
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