Technical parameters/rated power: 1.25 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1.25 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 2000 @500mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 1000
Technical parameters/rated power (Max): 1.25 W
Technical parameters/DC current gain (hFE): 2000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 200 MHz
Technical parameters/dissipated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BC817,215 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE
|
||
BSP52T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BSP52T1G 单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
|
||
BSP52T3G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BSP52T3G 达林顿晶体管, NPN, 80V, SOT-223
|
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