Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0019 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 6.25 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 31 ns
Technical parameters/Input capacitance (Ciss): 5660pF @20V(Vds)
Technical parameters/rated power (Max): 104 W
Technical parameters/descent time: 39 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR414DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SIR414DP-T1-GE3 晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V
|
||
SIR414DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAK SO |
VISHAY SIR414DP-T1-GE3 晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V
|
||
SIR814DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 40V 60A PPAK SO-8
|
||
SIR814DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET N-CH 40V 60A PPAK SO-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review