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Model SIR414DP-T1-GE3
Description MOSFET N-CH 40V 50A PPAK SO-8
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.34  yuan 5.34yuan
10+:
$ 6.4092
100+:
$ 6.0887
500+:
$ 5.8751
1000+:
$ 5.8644
2000+:
$ 5.8217
5000+:
$ 5.7683
7500+:
$ 5.7256
10000+:
$ 5.7042
Quantity
10+
100+
500+
1000+
2000+
Price
$6.4092
$6.0887
$5.8751
$5.8644
$5.8217
Price $ 6.4092 $ 6.0887 $ 5.8751 $ 5.8644 $ 5.8217
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7077) Minimum order quantity(10)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5.4W (Ta), 83W (Tc)

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Input capacitance (Ciss): 4750pF @20V(Vds)

Technical parameters/dissipated power (Max): 5.4W (Ta), 83W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PSMN2R6-40YS PSMN2R6-40YS Nexperia 功能相似 SOT-669
NXP PSMN2R6-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2 mohm, 10 V, 3 V
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SIR470DP-T1-GE3 SIR470DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SIR470DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
PDF
SIR470DP-T1-GE3 SIR470DP-T1-GE3 Vishay Semiconductor 类似代替 PowerPAK SO
VISHAY SIR470DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
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SIR470DP-T1-GE3 SIR470DP-T1-GE3 VISHAY 类似代替 SO-8
VISHAY SIR470DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
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