Technical parameters/drain source resistance: 0.0017 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 104 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 3800pF @20V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6.25W (Ta), 104W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR470DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 40V 60A PPAK SO-8
|
||
SIR470DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK SO |
MOSFET N-CH 40V 60A PPAK SO-8
|
||
SIR470DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 40V 60A PPAK SO-8
|
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