Technical parameters/drain source resistance: | 0.0017 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 104 W |
|
Technical parameters/threshold voltage: | 1 V |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC |
|
Dimensions/Packaging: | SOIC |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR470DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 40V 60A PPAK SO-8
|
||
SIR470DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK SO |
MOSFET N-CH 40V 60A PPAK SO-8
|
||
SIR470DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 40V 60A PPAK SO-8
|
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