Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0255 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 28.4 A
Technical parameters/Input capacitance (Ciss): 1170pF @50V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK
External dimensions/packaging: PowerPAK
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7454DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
|
||
SI7454DP-T1-E3
|
Vishay Intertechnology | 类似代替 | PowerPAK SO |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
|
||
SI7454DP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
|
||
SI7454DP-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 100V 5A PPAK SO-8
|
||
SI7454DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 100V 5A PPAK SO-8
|
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