Technical parameters/drain source resistance: 0.028 Ω
Technical parameters/dissipated power: 1.9 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK SO
External dimensions/packaging: PowerPAK SO
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Cut Tape (CT)
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Infineon | 功能相似 |
场效应管, MOSFET, N沟道, 100V, 9.3A, PQFN
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IRFH5053TRPBF
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Infineon | 功能相似 | PowerVDFN-8 |
INFINEON IRFH5053TRPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V 新
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