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Model SI7454DP-T1-E3

Description N沟道100 -V （D -S ）的MOSFET N-Channel 100-V (D-S) MOSFET

Brand: VISHAY

Packaging SO-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.028 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	4.8 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	100 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	7.80 A
Technical parameters/rise time:	10 ns
Technical parameters/rated power (Max):	1.9 W
Technical parameters/descent time:	20 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	4800 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SO-8
Dimensions/Packaging:	SO-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Other/Manufacturing Applications:	Automotive, power management, industrial, communication and networking
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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