Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.04 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.9 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 5A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7454DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
|
||
SI7454DP-T1-E3
|
Vishay Intertechnology | 类似代替 | PowerPAK SO |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
|
||
SI7454DP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
|
||
SIR432DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 100V 28.4A 54W 30.6mohm @ 10V
|
|||
SIR432DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET 100V 28.4A 54W 30.6mohm @ 10V
|
||
SIR432DP-T1-GE3
|
VISHAY | 类似代替 | PowerPAK |
MOSFET 100V 28.4A 54W 30.6mohm @ 10V
|
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