Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0082 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 3.6 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 25A
Technical parameters/rise time: 28 ns
Technical parameters/Input capacitance (Ciss): 2760pF @10V(Vds)
Technical parameters/rated power (Max): 33 W
Technical parameters/descent time: 38 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/packaging: 1212
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7107DN-T1-E3
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Vishay Siliconix | 类似代替 | 1212-8 |
Trans MOSFET P-CH 20V 9.8A 8Pin PowerPAK 1212 T/R
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SI7413DN-T1-E3
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Vishay Semiconductor | 类似代替 | 1212 |
P通道20 -V （D -S ）的MOSFET P-Channel 20-V (D-S) MOSFET
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SI7413DN-T1-E3
|
Vishay Siliconix | 类似代替 | 1212-8 |
P通道20 -V （D -S ）的MOSFET P-Channel 20-V (D-S) MOSFET
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