Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -13.2 A
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212-8
External dimensions/packaging: 1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7413DN-T1-GE3
|
VISHAY | 完全替代 | 1212 |
MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V
|
||
SI7413DN-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V
|
|||
SIS407DN-T1-GE3
|
VISHAY | 类似代替 | 1212 |
VISHAY SIS407DN-T1-GE3 晶体管, MOSFET, P沟道, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV
|
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