Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): -15.3 A
Technical parameters/thermal resistance: 2.4℃/W (RθJC)
Technical parameters/descent time: 240 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212-8
External dimensions/length: 3.15 mm
External dimensions/packaging: 1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7107DN-T1-GE3
|
VISHAY | 功能相似 | 1212-8 |
MOSFET 20V 15.3A 3.8W 10.8mohm @ 4.5V
|
||
SI7107DN-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-1212-8 |
MOSFET 20V 15.3A 3.8W 10.8mohm @ 4.5V
|
||
SI7123DN-T1-GE3
|
VISHAY | 类似代替 | PowerPAK-1212-8 |
20V 25A 52W 10.6mohm @ 4.5V
|
||
SIS407DN-T1-GE3
|
VISHAY | 功能相似 | 1212 |
MOSFET P-CH 20V 25A 1212-8 PPAK
|
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