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Model SI7413DN-T1-E3
Description PChannel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging 1212
Delivery time
Packaging method
Standard packaging quantity 1
4.26  yuan 4.26yuan
5+:
$ 5.7497
25+:
$ 5.3238
50+:
$ 5.0256
100+:
$ 4.8979
500+:
$ 4.8127
2500+:
$ 4.7062
5000+:
$ 4.6636
10000+:
$ 4.5997
Quantity
5+
25+
50+
100+
500+
Price
$5.7497
$5.3238
$5.0256
$4.8979
$4.8127
Price $ 5.7497 $ 5.3238 $ 5.0256 $ 4.8979 $ 4.8127
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9704) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.012 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.5 W

Technical parameters/drain source voltage (Vds): -20.0 V

Technical parameters/Continuous drain current (Ids): -13.2 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: 1212

External dimensions/packaging: 1212

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7413DN-T1-GE3 SI7413DN-T1-GE3 VISHAY 完全替代 1212
MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V
PDF
SI7413DN-T1-GE3 SI7413DN-T1-GE3 Vishay Semiconductor 完全替代
MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V
PDF
SIS407DN-T1-GE3 SIS407DN-T1-GE3 VISHAY 类似代替 1212
VISHAY SIS407DN-T1-GE3 晶体管, MOSFET, P沟道, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV
PDF

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