Technical parameters/drain source resistance: 0.031 Ω
Technical parameters/dissipated power: 1.8 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 5.99 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH5406TRPBF
|
International Rectifier | 功能相似 | PowerVQFN-8 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
||
IRFH5406TRPBF
|
IFC | 功能相似 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
|||
IRFH5406TRPBF
|
Infineon | 功能相似 | QFN-8 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
||
SI7850DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
MOSFET N-CH 60V 6.2A PPAK SO-8
|
||
SI7850DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 60V 6.2A PPAK SO-8
|
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