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Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/궟동: Single
Other/Case/Package: PowerPAK SO-8
Other/Packaging: Reel
Other/Brand: Vishay Semiconductors
Other/동착 동: SMD/SMT
Other/Soft 랜イ동터극동: N-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 10 ns
Other/Id - Link Files: 6.2 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 1.8 W
Other/Delete 품카테 High speed: N-Channel MOSFETs
Other/RDs On - Drain Source 저항: 22 mOhms
Other/상승クク: 10 ns
Other/Standard Pack Qty: 3000
Other/표준오프い Contact Us: 25 ns
Other/Vds - 레イ?동항복압: 60 V
Other/Vgs - 게イプ - ?동항복압: 20 V
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH5406TRPBF
|
International Rectifier | 功能相似 | PowerVQFN-8 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
||
IRFH5406TRPBF
|
IFC | 功能相似 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
|||
IRFH5406TRPBF
|
Infineon | 功能相似 | QFN-8 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
||
SI7850DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
VISHAY SI7850DP-T1-GE3 场效应管, MOSFET, N通道, 60V, 10.3A, SOIC, 整卷
|
||
SI7850DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
VISHAY SI7850DP-T1-GE3 场效应管, MOSFET, N通道, 60V, 10.3A, SOIC, 整卷
|
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