Technical parameters/drain source resistance: | 14.4 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 46 W |
|
Technical parameters/product series: | IRFH5406 |
|
Technical parameters/threshold voltage: | 4 V |
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Technical parameters/Input capacitance: | 1256pF @25V |
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Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 40.0 A |
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Technical parameters/Input capacitance (Ciss): | 1256pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.6 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PowerVQFN-8 |
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Dimensions/Length: | 6 mm |
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Dimensions/Height: | 0.85 mm |
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Dimensions/Packaging: | PowerVQFN-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH5406TR2PBF
|
International Rectifier | 类似代替 | PowerVQFN-8 |
INFINEON IRFH5406TR2PBF 晶体管, MOSFET, N沟道, 11 A, 60 V, 11.4 mohm, 10 V, 4 V
|
||
SI7850DP-T1-E3
|
Vishay Siliconix | 功能相似 | PowerPAKSO-8 |
VISHAY SI7850DP-T1-E3 晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
|
||
SI7850DP-T1-E3
|
VISHAY | 功能相似 | SO-8 |
VISHAY SI7850DP-T1-E3 晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
|
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