Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.031 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 10.3 A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH5406TRPBF
|
International Rectifier | 功能相似 | PowerVQFN-8 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
||
IRFH5406TRPBF
|
IFC | 功能相似 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
|||
IRFH5406TRPBF
|
Infineon | 功能相似 | QFN-8 |
INFINEON IRFH5406TRPBF 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V 新
|
||
SI7850DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
VISHAY SI7850DP-T1-GE3 场效应管, MOSFET, N通道, 60V, 10.3A, SOIC, 整卷
|
||
SI7850DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
VISHAY SI7850DP-T1-GE3 场效应管, MOSFET, N通道, 60V, 10.3A, SOIC, 整卷
|
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