Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -5.90 A
Technical parameters/rise time: 12 ns
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET P-CH 30V 5.7A 8-SOIC
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SI5403DC-T1-GE3
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SI5435BDC-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1206 |
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|
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SI5435BDC-T1-GE3
|
Vishay Intertechnology | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
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|
VISHAY | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Siliconix | 功能相似 | SMD-8 |
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|
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