Technical parameters/drain source resistance: | 0.03 Ω |
|
Technical parameters/dissipated power: | 1.5 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.5W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO-8 |
|
Dimensions/Length: | 5 mm |
|
Dimensions/Packaging: | SO-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2014/06/16 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9435A
|
Fairchild | 功能相似 | SOIC-8 |
FDS9435A 系列 30 V 50 mOhm P沟道 PowerTrench Mosfet - SOIC-8
|
||
FDS9435A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FDS9435A 系列 30 V 50 mOhm P沟道 PowerTrench Mosfet - SOIC-8
|
||
SI5435BDC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET 30V 5.9A 2.5W
|
||
SI5435BDC-T1-E3
|
VISHAY | 功能相似 | SMD-8 |
MOSFET 30V 5.9A 2.5W
|
||
SI5435BDC-T1-E3
|
Vishay Siliconix | 功能相似 | 1206 |
MOSFET 30V 5.9A 2.5W
|
||
SI5435BDC-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Intertechnology | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
VISHAY | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Siliconix | 功能相似 | SMD-8 |
MOSFET P-CH 30V 4.3A 1206-8
|
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