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Model SI5435BDC-T1-GE3
Description VISHAY SI5435BDC-T1-GE3 Field effect transistor, MOSFET, P-channel, -30V, 5.9A, 1206
Product QR code
Brand: Vishay Semiconductor
Packaging 1206
Delivery time
Packaging method
Standard packaging quantity 1
4.28  yuan 4.28yuan
5+:
$ 5.7767
25+:
$ 5.3488
50+:
$ 5.0492
100+:
$ 4.9209
500+:
$ 4.8353
2500+:
$ 4.7283
5000+:
$ 4.6855
10000+:
$ 4.6213
Quantity
5+
25+
50+
100+
500+
Price
$5.7767
$5.3488
$5.0492
$4.9209
$4.8353
Price $ 5.7767 $ 5.3488 $ 5.0492 $ 4.9209 $ 4.8353
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7731) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.035 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.3 W

Technical parameters/drain source voltage (Vds): -30.0 V

Technical parameters/Continuous drain current (Ids): -5.90 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation (metric): 3216

Encapsulation parameters/Encapsulation: 1206

External dimensions/length: 3.2 mm

External dimensions/width: 1.6 mm

Dimensions/Packaging (Metric): 3216

External dimensions/packaging: 1206

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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