Technical parameters/drain source resistance: 32.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4431BDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 30V 5.7A 8Pin SOIC N T/R
|
||
SI5435BDC-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Intertechnology | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
VISHAY | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Siliconix | 功能相似 | SMD-8 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
|
|
Zetex | 功能相似 | SOIC-8 |
场效应管(MOSFET) ZXMP3A16N8TA SO-8
|
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