Technical parameters/dissipated power: | 2.5W (Ta), 6.3W (Tc) |
|
Technical parameters/Input capacitance (Ciss): | 1340pF @15V(Vds) |
|
Technical parameters/dissipated power (Max): | 2.5W (Ta), 6.3W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SMD-8 |
|
Dimensions/Packaging: | SMD-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4431BDY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET P-CH 30V 5.7A 8-SOIC
|
||
SI5435BDC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET 30V 5.9A 2.5W
|
||
SI5435BDC-T1-E3
|
VISHAY | 功能相似 | SMD-8 |
MOSFET 30V 5.9A 2.5W
|
||
SI5435BDC-T1-E3
|
Vishay Siliconix | 功能相似 | 1206 |
MOSFET 30V 5.9A 2.5W
|
||
SI5435BDC-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Intertechnology | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
VISHAY | 功能相似 | 1206 |
MOSFET P-CH 30V 4.3A 1206-8
|
||
SI5435BDC-T1-GE3
|
Vishay Siliconix | 功能相似 | SMD-8 |
MOSFET P-CH 30V 4.3A 1206-8
|
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