Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -11.4 A
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SOT |
FDS6679AZ 系列 P 沟道 30 V 9.3 mOhm PowerTrench Mosfet - SOIC-8
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FDS6679AZ
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Fairchild | 功能相似 | SOIC-8 |
FDS6679AZ 系列 P 沟道 30 V 9.3 mOhm PowerTrench Mosfet - SOIC-8
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SI4425BDY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
VISHAY SI4425BDY-T1-E3 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.01 ohm, -10 V, -400 mV
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||
SI4425BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4425BDY-T1-E3 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.01 ohm, -10 V, -400 mV
|
||
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
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TPS1100DR
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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