Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -11.4 A
Technical parameters/rise time: 13 ns
Technical parameters/rated power (Max): 1.5 W
Technical parameters/descent time: 53 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power management, consumer electronics products
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4403CDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4403CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
|||
SI4403CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4425BDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
场效应管, MOSFET, P沟道
|
||
SI4425BDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
场效应管, MOSFET, P沟道
|
||
SI4425DDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
||
SI4425DDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
P沟道 VDS=-30V VGS=±20V ID=-19.7A P=5.7W
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review